IndiumV3, Main, Repository, bibRecord, 000157

Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures

Identifieur interne : 000157 ( Main/Repository ); précédent : 000156; suivant : 000158

Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures

Auteurs : RBID : Pascal:14-0025865

Descripteurs français

Pascal (Inist)
- Recuit, Propriété électrique, Caractéristique électrique, Propriété interface, Couche interfaciale, Microscopie force atomique, Dégradation, Endommagement, Morphologie surface, Structure surface, Contact électrique, Barrière Schottky, Caractéristique courant tension, Caractéristique capacité tension, Dépendance température, Effet température, Effet redresseur, Hauteur barrière, Charge espace, Résistance série, Densité état, Phosphure d'indium, Composé binaire, Vinylique chlorure polymère, Semiconducteur type n, 6837P, 8530H, InP.

English descriptors

KwdEn :
- Annealing, Atomic force microscopy, Barrier height, Binary compound, Damaging, Degradation, Density of states, Electric contact, Electrical characteristic, Electrical properties, Indium phosphide, Interface properties, Interfacial layer, Polyvinyl chloride, Rectifier effect, Schottky barrier, Series resistance, Space charge, Surface morphology, Surface structure, Temperature dependence, Temperature effect, Voltage capacity curve, Voltage current curve, n type semiconductor.

Abstract

In this work, a thin polyvinyl chloride (PVC) is deposited on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky structure. The atomic force microscopy (AFM) results show that there is no significant degradation in the surface morphology of the PVC Schottky contact even after annealing at 200 °C. The electrical parameters of Au/PVC/n-InP are calculated by current-voltage (I-V) and capacitance-voltage (C-V) techniques as a function of annealing temperature. Results show that the Au/PVC/ n -InP structure exhibits an excellent rectifying behavior. The extracted barrier height (BH) of as-deposited Au/PVC/ n -InP Schottky contact is 0.78 eV ( I-V ) and 0.87 eV ( C-V ). However, it is noted that the BHs increases to 0.85 eV ( I-V ) and 0.96 eV (C-V) upon annealing at 100 °C and then slightly decreases after annealing at 200 ° C . Results indicate that the PVC film increases the effective barrier height by influencing the space charge region of the Au/ n -InP junction. The series resistance of the Au/ PVC/ n -InP structure is extracted by Cheung's method. The interface state density ( N _ss) as determined by Terman's method is found to be 2.018 x 10¹² and 1.599 x 10¹²eV^-1cm ^-2 for the as-deposited and 100 °C annealed Au/PVC/ n -InP Schottky contacts, respectively. The experimental observations reveal that the Au/PVC/ n -InP Schottky diode parameters change with increasing annealing temperature.

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Pascal:14-0025865

Le document en format XML

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<author><name sortKey="Umapathi, A" uniqKey="Umapathi A">A. Umapathi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Sri Venkateswara University</s1>
<s2>Tirupati 517502</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Tirupati 517502</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rajagopal Reddy, V" uniqKey="Rajagopal Reddy V">V. Rajagopal Reddy</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Sri Venkateswara University</s1>
<s2>Tirupati 517502</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Tirupati 517502</wicri:noRegion>
</affiliation>
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<publicationStmt><idno type="inist">14-0025865</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0025865 INIST</idno>
<idno type="RBID">Pascal:14-0025865</idno>
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<seriesStmt><idno type="ISSN">0167-9317</idno>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<title level="j" type="main">Microelectronic engineering</title>
</seriesStmt>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Atomic force microscopy</term>
<term>Barrier height</term>
<term>Binary compound</term>
<term>Damaging</term>
<term>Degradation</term>
<term>Density of states</term>
<term>Electric contact</term>
<term>Electrical characteristic</term>
<term>Electrical properties</term>
<term>Indium phosphide</term>
<term>Interface properties</term>
<term>Interfacial layer</term>
<term>Polyvinyl chloride</term>
<term>Rectifier effect</term>
<term>Schottky barrier</term>
<term>Series resistance</term>
<term>Space charge</term>
<term>Surface morphology</term>
<term>Surface structure</term>
<term>Temperature dependence</term>
<term>Temperature effect</term>
<term>Voltage capacity curve</term>
<term>Voltage current curve</term>
<term>n type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term>
<term>Propriété électrique</term>
<term>Caractéristique électrique</term>
<term>Propriété interface</term>
<term>Couche interfaciale</term>
<term>Microscopie force atomique</term>
<term>Dégradation</term>
<term>Endommagement</term>
<term>Morphologie surface</term>
<term>Structure surface</term>
<term>Contact électrique</term>
<term>Barrière Schottky</term>
<term>Caractéristique courant tension</term>
<term>Caractéristique capacité tension</term>
<term>Dépendance température</term>
<term>Effet température</term>
<term>Effet redresseur</term>
<term>Hauteur barrière</term>
<term>Charge espace</term>
<term>Résistance série</term>
<term>Densité état</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>Vinylique chlorure polymère</term>
<term>Semiconducteur type n</term>
<term>6837P</term>
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<front><div type="abstract" xml:lang="en">In this work, a thin polyvinyl chloride (PVC) is deposited on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky structure. The atomic force microscopy (AFM) results show that there is no significant degradation in the surface morphology of the PVC Schottky contact even after annealing at 200 °C. The electrical parameters of Au/PVC/n-InP are calculated by current-voltage (I-V) and capacitance-voltage (C-V) techniques as a function of annealing temperature. Results show that the Au/PVC/ n -InP structure exhibits an excellent rectifying behavior. The extracted barrier height (BH) of as-deposited Au/PVC/ n -InP Schottky contact is 0.78 eV ( I-V ) and 0.87 eV ( C-V ). However, it is noted that the BHs increases to 0.85 eV ( I-V ) and 0.96 eV (C-V) upon annealing at 100 °C and then slightly decreases after annealing at 200 ° C . Results indicate that the PVC film increases the effective barrier height by influencing the space charge region of the Au/ n -InP junction. The series resistance of the Au/ PVC/ n -InP structure is extracted by Cheung's method. The interface state density ( N <sub>ss</sub>
) as determined by Terman's method is found to be 2.018 x 10<sup>12</sup>
 and 1.599 x 10<sup>12 </sup>
eV<sup>-1 </sup>
cm <sup>-2</sup>
 for the as-deposited and 100 °C annealed Au/PVC/ n -InP Schottky contacts, respectively. The experimental observations reveal that the Au/PVC/ n -InP Schottky diode parameters change with increasing annealing temperature.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures</s1>
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<fA11 i1="01" i2="1"><s1>UMAPATHI (A.)</s1>
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<fA11 i1="02" i2="1"><s1>RAJAGOPAL REDDY (V.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, Sri Venkateswara University</s1>
<s2>Tirupati 517502</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>In this work, a thin polyvinyl chloride (PVC) is deposited on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky structure. The atomic force microscopy (AFM) results show that there is no significant degradation in the surface morphology of the PVC Schottky contact even after annealing at 200 °C. The electrical parameters of Au/PVC/n-InP are calculated by current-voltage (I-V) and capacitance-voltage (C-V) techniques as a function of annealing temperature. Results show that the Au/PVC/ n -InP structure exhibits an excellent rectifying behavior. The extracted barrier height (BH) of as-deposited Au/PVC/ n -InP Schottky contact is 0.78 eV ( I-V ) and 0.87 eV ( C-V ). However, it is noted that the BHs increases to 0.85 eV ( I-V ) and 0.96 eV (C-V) upon annealing at 100 °C and then slightly decreases after annealing at 200 ° C . Results indicate that the PVC film increases the effective barrier height by influencing the space charge region of the Au/ n -InP junction. The series resistance of the Au/ PVC/ n -InP structure is extracted by Cheung's method. The interface state density ( N <sub>ss</sub>
) as determined by Terman's method is found to be 2.018 x 10<sup>12</sup>
 and 1.599 x 10<sup>12 </sup>
eV<sup>-1 </sup>
cm <sup>-2</sup>
 for the as-deposited and 100 °C annealed Au/PVC/ n -InP Schottky contacts, respectively. The experimental observations reveal that the Au/PVC/ n -InP Schottky diode parameters change with increasing annealing temperature.</s0>
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<fC02 i1="01" i2="X"><s0>001D11C02A</s0>
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<fC02 i1="02" i2="3"><s0>001B80A40E</s0>
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<fC02 i1="03" i2="X"><s0>001D11G05</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60H35B</s0>
</fC02>
<fC02 i1="05" i2="X"><s0>240</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Recuit</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="ENG"><s0>Annealing</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="GER"><s0>Gluehen</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="SPA"><s0>Recocido</s0>
<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<fC03 i1="02" i2="X" l="GER"><s0>Elektrische Eigenschaft</s0>
<s5>02</s5>
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<fC03 i1="02" i2="X" l="SPA"><s0>Propiedad eléctrica</s0>
<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
</fC03>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Atomic force microscopy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Microscopía fuerza atómica</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Dégradation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Degradation</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Degradación</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Endommagement</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Damaging</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Deterioración</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Morphologie surface</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Surface morphology</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Structure surface</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Surface structure</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="GER"><s0>Oberflaechenbeschaffenheit</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Estructura superficie</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Contact électrique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Electric contact</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="GER"><s0>Elektrischer Kontakt</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Contacto eléctrico</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Barrière Schottky</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Schottky barrier</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Barrera Schottky</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Voltage current curve</s0>
<s5>13</s5>
</fC03>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>14</s5>
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<s5>15</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Effet température</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Temperature effect</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="GER"><s0>Temperatureinfluss</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Efecto temperatura</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Effet redresseur</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Rectifier effect</s0>
<s5>17</s5>
</fC03>
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<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Hauteur barrière</s0>
<s5>18</s5>
</fC03>
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<s5>18</s5>
</fC03>
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<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Charge espace</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Space charge</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Carga espacio</s0>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Résistance série</s0>
<s5>20</s5>
</fC03>
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<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Resistencia en serie</s0>
<s5>20</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Densité état</s0>
<s5>21</s5>
</fC03>
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<s5>21</s5>
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<s5>21</s5>
</fC03>
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<s5>21</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="GER"><s0>Indiumphosphid</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>22</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>23</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Vinylique chlorure polymère</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Polyvinyl chloride</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Vinílico cloruro polímero</s0>
<s2>NK</s2>
<s2>FX</s2>
<s5>24</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Semiconducteur type n</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>n type semiconductor</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="GER"><s0>N Leiter</s0>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Semiconductor tipo n</s0>
<s5>25</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>6837P</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>8530H</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21><s1>027</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures
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Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures

Effect of annealing on the electrical and interface properties of Au/PVC/n-InP organic-on-inorganic structures

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